发明名称 MANUFACTURE OF POLYCRYSTALLINE SILICON WAFER
摘要 PURPOSE:To strip off easily a product wafer when a polycrystalline silicon wafer is produced by a spin method by using a manufacturing dish made of a porous material and dissolving the coalescent surface with a silicon-corrosive solution bled on the surface of said dish. CONSTITUTION:At the central part of a rotating dish 1 for manufacturing, molten silicon is dropped, and a thin film of molten liquid formed on said dish 1 is cooled and solidified to form a polycrystalline silicon wafer 2 (spin method). In above-described method, a dish made of porous carbon or the like is used as said dish 1. After a silicon sheet 2 consisting of the solidified silicon melt is formed on the dish, the dish is put in a container A and a corrosive solution (e.g. a liquid mixture of fluoric acid and nitric acid) 3 is poured. Silicon at the interface of the dish 1 and the sheet 2 is dissolved by the corrosive liquid permeated through the dish 1 and attained to the top face, and the silicon sheet 2 is stripped off from the dish 1.
申请公布号 JPS59174513(A) 申请公布日期 1984.10.03
申请号 JP19830047724 申请日期 1983.03.22
申请人 HOKUSAN:KK 发明人 YOKOYAMA TAKASHI;HIDE ICHIROU
分类号 C01B33/02;H01L31/00;H01L31/04 主分类号 C01B33/02
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