发明名称 |
Method for dry etching of a substrate surface |
摘要 |
The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.
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申请公布号 |
US4465553(A) |
申请公布日期 |
1984.08.14 |
申请号 |
US19830551898 |
申请日期 |
1983.11.15 |
申请人 |
TOKYO DENSHI KAGAKU CO., LTD. |
发明人 |
HIJIKATA, ISAMU;UEHARA, AKIRA;NAKANE, HISASHI |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):H01L21/30;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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