发明名称 HOT DIPPING METHOD
摘要 PURPOSE:To permit easy thick plating on a long-sized material and to perform hot dipping with less deviation in a plating thickness by providing a vessel having a large-sized gas discharging port at the upper part of a plating bath, and introducing a non-oxidative gas into the vessel. CONSTITUTION:A gas vessel 4 provided with a gas discharging port 7 having the bore larger than the outside diameter of a material 1 to be plated is provided to the restricting part at the upper part of a plating bath 2. The material 1 is conducted from the bath 2 into the vessel 4 and is pulled upward through the port 7. Non-oxidative gas, such as N2, is fed into the vessel 4 through a gas introducing port 6 to maintain the inside of the vessel in a non-oxidative atmosphere thereby preventing the oxidation on the surface of the bath 2 at the restricting part. Gas is discharged at the same instant from the port 7 along the material 1 to cool quickly the material 1. The dropping of the plating is prevented in thick plating and the hot dipped wire having good appearance is obtd. The contact of the material 1 with solid material and consequent deviation in plating thickness are obviated.
申请公布号 JPS59118870(A) 申请公布日期 1984.07.09
申请号 JP19820233253 申请日期 1982.12.25
申请人 SUMITOMO DENKI KOGYO KK 发明人 SATOU KENICHI;TAKANO SATORU;MIYAZAKI TAKESHI
分类号 C23C2/14;C23C2/28;C23C2/36 主分类号 C23C2/14
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