| 摘要 |
PURPOSE:To prevent a punch-through of Al with the fining of an element by implanting the ions of an impurity through a contact hole and forming source- drain regions through heat treatment. CONSTITUTION:A field oxide film 12, a gate electrode 13 and a gate oxide film 14 are formed on a substrate 11, and the impurity is implanted while using the gate electrode 13 and the field oxide film 12 as masks to form implantation layers 151, 152. An inter-layer insulating film 16 is deposited on the whole surface, and the contact holes 191, 192 are bored. Silicon is injected through the contact holes 191, 192, and the whole is thermally treated. Accordingly, junction depth immediately under the contact holes 191, 192 is deepened, and the junction breakdown of an Al electrode can be prevented.
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