发明名称 ABSOLUTE PRESSURE TYPE SEMICONDUCTOR PRESSURE SENSOR
摘要 PURPOSE:To prevent infiltration of moisture into the surface of a gauge chip for a greater anticorrosivity by forming a thin film containing fluorine on the surface thereof on which an electrode is provided to lead out a signal having a pressure sensitive section. CONSTITUTION:A pressure sensor is so arranged to connect between a chip A electrode 11 and a hard frame 9 by a wire bonding with a metal wire 6 to draw an electrical signal. In this case, a fluorocarbon film 21 is formed on the surface of a silicon gel 7. With such an arrangement, a fluorocarbon film is also formed on the boundary between the metal wire 6 and the silicon gel 7 to prevent infiltration of moisture into the surface of a gauge chip thereby improving the anticorrosivity.
申请公布号 JPS5997029(A) 申请公布日期 1984.06.04
申请号 JP19820206091 申请日期 1982.11.26
申请人 HITACHI SEISAKUSHO KK 发明人 ICHIKAWA NORIO;IWASAKI KISHIROU;UCHIYAMA KAORU
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
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