发明名称 LIQUID EPITAXIAL GROWTH DEVICE
摘要 PURPOSE:To make the crystal layer with different constituent epitaxially grow into multiple structure on a substrate by a method wherein the two chambers composed of a pair of supporting members, a sector partition plate and four plate members are filled with the material of a crystal layer with different constituent to be formed on a substrate. CONSTITUTION:A liquid epitaxial growth device is composed of a pair of quartz bars 13A, 13B with cavities 12 holding a substrate made of e.g. CdTe, partition plates 14 made of sector quartz plate inscribing the inner wall of a sealed tube 11 and the quartz plates 17, 18, 19, 20 extending from the two sides 15, 16 of the partition plates 14. These quartz plates 17, 18 and 19, 20 are alternately provided with the onesided gaps l1, l2 on the inner wall of the sealed tube 11 separated by the partition plate 14. Through these procedures, the first chamber 21 may be formed of the supporting bar 13A, the partition plate 14 and the plate members 17, 18 between a pair of supporting bars 13A and 13B while the second chamber may be formed of the supporting bar 13B, the partition plate 14 and the plate members 19, 20.
申请公布号 JPS5950532(A) 申请公布日期 1984.03.23
申请号 JP19820162052 申请日期 1982.09.16
申请人 FUJITSU KK 发明人 MARUYAMA KENJI;ITOU MICHIHARU;UEDA TOMOSHI;YOSHIKAWA MITSUO
分类号 H01L21/208;H01L21/368 主分类号 H01L21/208
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