| 摘要 |
PURPOSE:To obtain the gate electrode and the wiring of semiconductor device having small contact resistances, and moreover having the favorable ohmic properties when the gate electrode and the wiring are to be formed using the silicide of Mo, W, V, etc., by a method wherein impurities are made to be contained the high melting point metal silicide. CONSTITUTION:Thick field oxide films 2 are formed selectively on a p type Si substrate 1, thin gate oxide films 3 are adhered between them, an opening is dug at the load resistance forming part to form an n<+> type resistance region 4 by diffusion, and the wiring 52 consisting of the silicide of the high melting point metal containing n tupe imprities is formed thereon. While the gate electrode 51 is provided also in the MOSFET forming region using the similar silicide, and the films 3 on both the sides thereof are removed to form an n<+> type source region 6 and drain region 7 by diffusion. After then, an oxide film 8 is generated on the whole surface containing the electrode 51 and the wiring 52 accordng to the CVD method. Accordingly, diffusion of impurities to the silicide from the surface of the Si substrate is suppressed, ohmic contact resistances between the high melting point metal silicides and the diffusion layers are lowered, and the favorable electrode and the wiring are obtained. |
