| 摘要 |
PURPOSE:To obtain a high-speed dynamic MISRAM with a simple constitution, by supplying electric power to a selected word line from the furthest side of the word line via a word line amplifier. CONSTITUTION:An FETQ5 of a word line amplifier W-AMP of the selected word line VW is turned on by a clock phi1, and therefore FETQ1 and Q2 are turned on with an FETQ4 turned on. Then the clock phi1 is turned on, and the electric power is supplied also from the furthest side of the line VW via a bootstrap capacity CB1. In the same way, the electric power is supplied to a dummy word line VWO. As a result, the writing/reading is carried out with no delay to an RAM memory cell at the furthest side of the word line with a simple constitution and regardless of the resistance of the word line. This ensures a high- speed operation of a dynamic MISRAM. |
