| 摘要 |
PURPOSE:To prevent melts from mixing with one another when a multilayered film is grown in a liq. phase growing apparatus, by cutting a plurality of slits in a fixed plate and by charging a melt in each melt reservoir into each melt reservoir for growth through the corresponding slit. CONSTITUTION:Upper and under sliders 32, 34 are slid, the 1st melt reservoir 31a and the 1st melt reservoir 33a for growth are stopped at the position of slits, and the 1st melt L1 is charged into the reservoir 33a through the 1st slit 36a. When the reservoir 33a reaches a substrate S by further sliding, the 1st grown layer is formed on the substrate S. The 2nd melt reservoir 31b and the 2nd melt reservoir 33b for growth are then stopped at the position of the slits, and simultaneously a multilayered grown film is formed. In the stages, slits except the slit corresponding to one of the reservoirs 31a-31c are covered with the bottom of the reservoir and the ceiling of the corresponding reservoir for growth, so the melts L1-L3 do not mix with one another. |
