| 摘要 |
PURPOSE:To improve coating quality of an insulatiom film or wiring layer, by a method wherein when an etching material formed on the surface of a substrate is subjected to dry etching into a required pattern, ion of prescribed high dose amount is implanted previously on surface of the material and at a prescribed pressure, and cross-sectional shape of the material is inclined. CONSTITUTION:Gate such as an MOS element and a polycrystalline Si film 3 for wiring at thickness of about 5,000Angstrom are formed on a semiconductor substrate 1 through an insulation film 2. Ion of high dose amount more than 1X10<15>/cm<2> is implanted onto Si film 3. A resist pattern 4 for an etching mask is formed on the film 3, and pressure is made more than 100 mTorr using mixed gas of CF4 and O2 and exposed part of the film 3 is subjected to dry etching. In this constitution, etching rate to surface of the film 3 remaining below the pattern 4 becomes about 1.7 times and inclined surface of about 60 deg. with respect to the vertical direction is obtained. Thus breakage does not occur when the pattern 4 is removed and wiring is provided. |
