| 摘要 |
PURPOSE:To arbitrarily control the decelerating time of switching a transistor having ultrafinely divided base electrode contacting windows and divided emitter regions by selectively closing the divided base electrode contacting windows. CONSTITUTION:A transistor has ultrafinely divided base electrode contacting windows and divided emitter regions in a range capable in a manufacturing process. As designated by ''o'' in the drawing, part of the windows 3 is not opened. Thus, the period required to draw the minority charge stored in the base region 1 becomes long. Part of windows is selectively opened when forming the windows 3, and the other is not opened. Various transistors of different decelerating times can be manufactured by selecting the numbers of those opened in the windows and not opened in the windows. Since the steps of forming the windows 3 is near the final step of a wafer process, the middle product so far is manufactured, and the period to completion of the transistor having the desired decelerating time can be extremely short from the time upon the reception of user's order. The positional relationship to those not opened in the windows of the windows 3 is preferably regular. |
