| 摘要 |
PURPOSE:To inspect the defect of a field oxide film based on the presence of the current flowing between diffused layers by a method wherein a fixed voltage is impressed between the diffused layers which are isolated by the field oxide film. CONSTITUTION:The field oxide film 2, gate oxide films 3 and 5, and gate electrodes 4 and 6 are formed on an Si substrate 1. A DC power source 31 is connected to the diffused layer 101 via an Ampere meter 33. The negative poles of power sources 31 and 32 are connected to the diffused layer 102. In case that the film 2 is not formed, when the voltage higher than the threshold voltage of the MOSFET composed of the film 3 and the electrode 4 is impressed on the electrode 4, and the voltage higher than the threshold voltage of the MOSFET composed of the film 5 and the electrode 6 is impressed on the electrode 6, the layers 101 and 102 become into conduction to each other. |
