| 摘要 |
PURPOSE:To obtain an output signal of good discrimination property for signal level and sufficiently large amplitude and to enable high speed operations by a method wherein a defective layer is provided at the part of a semiconductor film at the interface wherein the source region of a semiconductor substrate and the source region of a semiconductor film are in contact with each other. CONSTITUTION:Since the source region 105 of an n-channel MOS transistor formed on the p type Si substrate 101 and the p<+> type source region 112 of a polycrystalline Si film pattern 110 laminated on the substrate 101 are in contact with each other via the defect layer 115, the rectification of a parasitic diode generated between those source regions 105 and 112 can be restrained. Therefore, in the case of operation of an inverter device by inputting voltage to a common gate electrode 104, the signal output can be outputted from a signal output electrode 120 between VDD and VSS at full-swing, accordingly the discrimination property for signal level can be remarkably improved. |
