| 摘要 |
PURPOSE:To increase mutual conductance by a method wherein a material, wherein a high-resistance film is a thin film transistor insulating layer and a low-resistance film is a conductive layer, is employed with its two layers respectively used as an insulating layer and conductive layer. CONSTITUTION:The top surface of an electrode 8 is subjected to heat in the neighborhood of 500 deg.C for the formation of approximately 1mum-thick, high-resistance CdSe layer 9 with its composition roughly satisfying stoichometrically proved value. A CdSe region 10 with low resistivity of 10<5>-10<7> is provided on the layer 9 by selective diffusion of Cd 0.1-0.2mum deep. It is presumed that the introduction into the layer 10 of Cd changes the stoichometrically balanced CdSe composition and produces an excessive quantity of Cd or of holes in Se, which results in a lower resistivity attributable to enriched carrier concentration in CdSe. This eliminates lattice non-alignment on the surface between the insulating and conductive layers and the rate of carriers captured therein is greatly reduced. |
