Method of manufacturing photosensors

摘要

A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140 DEG C. and not higher than 280 DEG C. The heat treatment is performed preferably at a temperature between 170 DEG to 250 DEG C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.