| 摘要 |
PURPOSE:To obtain a single crystal of gallium arsenide having a low transition density and a large area with high reproducibility, by doping a single crystal of gallium arsenide with specific amounts of silicon and zinc in the preparation thereof. 13 CONSTITUTION:In preparing single crystals of gallium arsenide, the single crystals are doped with (1) 1X10<18>-6X10<18>/cm<3> silicon and (2) zinc in a larger amount than the silicon, preferably 1.5X10<18>-1X10<20>/cm<3>, to give <=2X10<3>/cm<3> transion density in the single crystals of large area having >=10cm<2> cross-sectional area perpendicular to the growth direction. The resultant gallium arsenide single crystals are usable as a substrate of high quality for semiconductor laser or microwave elements. Thus, the single crystals of large area provide the reduction in the preparation cost necessary for the treatment of wafers, and the low transition density provides the prolonged life and high efficiency of elements. |
