| 摘要 |
<p>PURPOSE:To speedily obtain a thin protective film with high hardness and denseness through a low-temperature process, by providing an insulating metal oxide layer formed by using a metal alkoxide solution as a starting material, or a composite layer thereof with a nitride or a carbide. CONSTITUTION:A counter electrode and heat generating resistors are provided on an insulating substrate comprising a ceramic or an enamel. A metal alkoxide solution with or without additives is supported on the heat generating resistors by application, dip coating or spin coating, followed by hydrolysis and then thermal decomposition at a low temperature not higher than 500 deg.C to provide a metal oxide layer in an arbitrary thickness (100Angstrom to several micrometers). The layer is extremely dense, substantially free of pinholes, and has a high dielectric strength. When a powder of a high-hardness material such as an SiC powder is added to the metal alkoxide solution, the resultant film has a higher hardness, a smaller thickness and a higher denseness as compared with the above.</p> |
