| 摘要 |
PURPOSE:To stabilize characteristics, and to improve the controllability of breakdown voltage by separately forming a region having a conduction type reverse to a base body and a region having the same conduction type as the base body and high impurity concentration to the surface of the base body and forming a conductive film overlapping to both regions through an insulating film. CONSTITUTION:The P type region 2 and the N<+> type region 3 having impurity concentration higher than the N type semiconductor base body 1 are formed separately to the main surface of the base body 1. The surface is coated with the insulating film 4 such as a silicon oxide film, the region 2, the region 3 and the upper section of the surface of the base body 1 surrounded by the regions 2, 3 are coated with the conductive electrode 5 so that at least one parts of the region 2 and the region 3 are overlapped from the upper section of the insulating film 4, and the electrode 5 is used as a gate G. Electrodes 6 are formed properly to the base body 1 and the region 2, voltage is applied between the gate G and an anode A as the anode A, and an inversion layer 7 is formed. Reverse bias voltage is elevated, and a depletion region 71 is formed to the surface between the inversion layer 7 and the region 3. |
