| 摘要 |
<p>A silicon capacitive pressure transducer (34) comprising two wafers of silicon (14, 32) separated by borosilicate glass (18, 21), one of the wafers (14) having a borosilicate glass pedestal (26) thereon which is metallized (30) to provide one plate of a capacitor, the other plate of which is the surface of one of the silicon wafers (32). The distance between the upper surface of the glass pedestal and the lower surface of the silicon wafer is defined by a portion (18) of the borosilicate glass, the portion (21) of borosilicate glass being the same height as that of the glass pedestal (26). An embodiment of a transducer (34b) employs a silicon pedestal (26b), wherein the glass portion (21b) only provides separation of the silicon wafers (14b, 32b) with lower parasitic capacitance.</p> |
