| 摘要 |
PURPOSE:To provide a high speed modulation surface light emission type light emitting diode having excellent pulse responsive characteristics by introducing an active region and a buffer layer having the same forbidden band width and low impurity carrier density between regions forming a p-n junction. CONSTITUTION:A semiconductor substrate 2 is formed of a conductive n type n type InP single crystal of n-1X10<18>cm<-3> of impurity carrier density, and an active semiconductor layer 3 corresponds to conductive n type forbidden band width of 0.95eV of n-1X10<18>cm<-3> of impurity carrier density. A buffer layer 4 corresponds to conductive n type, a clad region 5 corresponds to conductive p type, and an electrode forming layer 6 corresponds to conductive n type forbidden band width of 1.13eV. An Zn diffused region 6a is formed by selectively diffusing Zn in the layer 6. An electrode 1 is formed of Au-Ge-Ni alloy, and an electrode 7 is formed of Au-Zn alloy. |
