| 摘要 |
PURPOSE:To contrive a high integration, by using reverse directional resistors at a P and N type junction parts in a poly Si layer as the high resistant element of an FF circuit. CONSTITUTION:The poly Si is deposited on the SiO2 film 12 on an Si substrate 11, an impurity is selectively doped, thus a P layer 14, a junction part 13 and an N layer 15 are provided, and accordingly the high resistant element part is constituted. Next, a layer insulating film 17 is provided, contact holes are provided, and metallic wirings 18, 19 are added. The wiring 18 connected to the N type poly Si layer 15 is provided with a high potential, and the electrodes 18, 19 are respectively to terminals 61, 63 of the FF circuit. In this constitution, the high resistant element of the FF circuit in a memory array is sufficiently formed of the area of the junction part, and therefore a high integration can be provided without the influence due to a heat treatment process. |
