| 摘要 |
PURPOSE:To form an excellent ohmic contact with an electrode region layer, by possessing a diffused alloy layer ohmic-contacted on a semiconductor substrate and a pure metallic layer which is newly formed on this diffused alloy layer and forms a bonding wire mounting surface. CONSTITUTION:The P type GaP layer 12 is formed on the upper surface of the N type GaP substrate 11. The Au alloy layer 14a containing 0.5-2.0% of Be to emit lights on a P-N junction surface 13 is evaporated approx. 0.5mu thick on this GaP layer 12, a heat treatment is performed for 10-30min at 500-550 deg.C (400- 450 deg.C when the substrate is of GaAs), and accordingly an ohmic contact is obtained. Next, the Au alloy layer 14a on the surface of the GaP layer 12 is removed, and thus only the diffused alloy layer 16 under the surface is left. Further, after the surface treatment, the pure metallic layer 14b not containing impurities is laminated 0.2-2.0mu thick resulting in the evaporation. |
