| 摘要 |
PURPOSE:To prevent the production of a heat crack by coating solder paste on a semiconductor wafer formed with ohmic electrodes and then heating it at a temperature higher than solder melting point, thereby forming a solder layer on the ohmic electrodes. CONSTITUTION:A metal layer 2 for an ohmic electrode is deposited on the overall semiconductor wafer 2 finished with the final diffusion step, a resist is then coated on the layer 2, is exposed and developed, thereby forming a resist pattern 3, the layer 2 between the resists 3 is etched, thereby dissolving the resist 3 to insularly form ohmic electrodes 2a. Then, solder paste 3 is coated on the surface of the wafer 1, and a solder layer 4a is formed on the electrodes 2a by heating the paste at a temperature higher than the solder melting point in atmospheric air or inert gas atmosphere. |
