发明名称 |
Method for manufacturing an I2L semiconductor device |
摘要 |
An oxide layer is partially formed on an n-type region surrounded by a field oxide region. A base region of a switching transistor is formed in the n-type region using as a mask the oxide layer. Arsenic-doped polysilicon layers are selectively formed simultaneously on the surfaces of the oxide layer and the base region. Using the polysilicon layers as a mask, the emitter and collector regions of an injector transistor and the external base region of a switching transistor are formed in the n-type region and the base region respectively. Arsenic doped into the polysilicon layers is diffused into the base region, so that the collector regions of the switching transistor are self-aligned with the polysilicon layers.
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申请公布号 |
US4377903(A) |
申请公布日期 |
1983.03.29 |
申请号 |
US19810236248 |
申请日期 |
1981.02.18 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
KANZAKI, KOICHI;TAGUCHI, MINORU |
分类号 |
H01L27/082;H01L21/033;H01L21/331;H01L21/8226;H01L29/73;(IPC1-7):H01L21/26;H01L21/22 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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