发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To inspect a function before the device is divided into chips by forming the input/output terminals of beams to the main surface of the second semiconductor layer in structure in which the first semiconductor layer shaping a light-emitting section and an optical guide is held by the second semiconductor layer to form multilayer structure and beams from the light-emitting section are extracted from the end section of the first semiconductor layer. CONSTITUTION:An N type InP layer 2, an InGaAsP active layer 3 functioning as the optical guide, a P type InP layer 4 and an N type InGaAsP layer 5 are laminated and deposited onto an N<+> type InP substrate 1, an opening section 9 entering the active layer 3 is bored, and the section 9 is used as an output terminal section 7. Al Electrodes 8 are each attached onto the layer 5 at a position separating from the terminal section 7 and the back of the substrate 1, and an optical IC element 11 is manufactured. When the function of the element 11 is inspected, a probe 12 is contacted with the electrode 8 of the surface and electrical signals are supplied, and laser beams 13', which are generated in the active layer 3 and reach to the opening section 9, are extracted by means of a glass fiber 15 inserted into the section 9 and inspected. When the function is excellent, the device is divided into two chips according to a broken line.
申请公布号 JPS5848983(A) 申请公布日期 1983.03.23
申请号 JP19810148532 申请日期 1981.09.18
申请人 MATSUSHITA DENKI SANGYO KK 发明人 SHIRAGASAWA TSUYOSHI;NOYORI MASAHARU;KONDOU SHIYUUJI;NAKADA YOSHIROU
分类号 G02B6/42;H01L27/15;H01L33/30;H01L33/40;H01S5/00;H01S5/022 主分类号 G02B6/42
代理机构 代理人
主权项
地址