| 摘要 |
PURPOSE:To prevent short-circuit of channel by forming the source and drain electrodes deeply in the area near to the gate electrode or shallowly in the area far from it. CONSTITUTION:The field oxide film 3, silicon oxide film 4 and gate electrode 5 are formed on the silicon substrate 1. Then, the SiO2 film is deposited. Thereafter, the SiO2 film 6 is left only at the side end part of electrode 5 by the etching. The gate oxide film 7 is formed by etching the film 4. Next, the arsenic ion is implanted to the substrate 1. At this time, since the film 7 controls the depth of implantation, the arsenic ion is implanted shallowly at the area near to the electrode 5 but deeply at the area isolated far from the electrode. Thereafter, the thermal processing for activation is carrier out in order to form the source and drain regions 8, 9. |
