| 摘要 |
PURPOSE:To keep clean the raw material and substrate to be used for epitaxy by connecting with the gate valve the electron beam source chamber with the substrate chamber providing the phosphor supply source. CONSTITUTION:The crystal growing chamber A is divided into the molecular beam source chamber 2 providing the molecular beam cell to be used for epitaxy and the substrate chamber 1 providing the phosphor supply source in order to prevent thermal decomposition of substrate in the stage before growing, these chambers are coupled with the gate valve 16 and each chamber is provided respectively with the exhaustion system 11, 12, 17. Thereby, a large amount of phosphor can be supplied to the substrate without contaminating the raw materials to be used for epitaxy, making possible the epitaxial growth under a high substrate temperature. Moreover, the raw materials to be used for epitaxy can be baked without contaminating the substrate. |
