Vapor phase deposition of semiconductor material.

摘要

A <> type low pressure vapor phase deposition system, i.e. a system using a horizontal reaction tube (4) in which semiconductor wafers are arranged parallel to one another and transversely to a longitudinal axis of the tube, is employed to grow semiconductor films on the wafers from a main gas introduced through a main inlet (12) into the reaction tube. An auxiliary gas comprising an impurity gas is introduced from an auxiliary inlet (16) into the reaction tube in such a manner that the impurity gas diffuses toward the main inlet along an inner boundary surface of the reaction tube, thereby improving the overall uniformity of the thickness and specific resistivity of the semiconductor layers deposited on the wafers.