| 摘要 |
PURPOSE:To discriminate the resolution of a gap after development easily through visual observation or an electric probing method or the like by drawing a pattern for evaluation with the gap in size approximately close to the limitation of the resolution of a resist onto a mask substrate coated with the resist through repeated exposure. CONSTITUTION:The size of gaps (g) between an element pattern 11a in a first pattern 11 and an X-axis element pattern 12A in a second pattern 12 and between the same element pattern 11b and Y-axis element pattern 12B is set at a value close to the limitation of the resolution of an EB resist used for the mask substrate 10. When the mask substrate 10 is develped and treated after drawing the patterns, the gap is resolved as the gap (g) as it is when the gap (g) is drawn, holding normal width (specifications). When the gap is made narrower than normal width by defective precision, on the other hand, the gap is not resolved as the gap because partial connection, etc. are generated among the adjacent first and second patterns 11, 12. Accordingly, the presence of the abnormality of the positional precision of the drawing of the patterns for an EB exposure device can easily be judged. |
