| 摘要 |
PURPOSE:To provide a titled sensor of superior temp. characteristics at a low cost by forming a silicon crystal to >=500mu thickness, and adhering a stem directly to said crystal. CONSTITUTION:After a 35mu diaphragm is formed by etching an Si single crystal of 500mu thickness with an aq. potassium hydroxide soln. with a silicon nitride film as a mask, said crystal is adhered directly to a ''Koval '' stem 14 by means of silicone rubber 19. Thus the performance equivalent to that of conventional semiconductor pressure sensors is obtained. Since the ''Koval '' has a coefft. of thermal expansion approximate to the coefft. of thermal expansion of Si and since the silicon rubber is relatively soft after curing and the distance from the adhered parts thereof with the pellet up to the diaphragm is relatively long, thermal strains are adsorbed and no adverse influence is given upon the strain gauge. |
