| 摘要 |
PURPOSE:To prevent the invasion of the light transmitted through a poly Si film and reflected at the interface between the lower SiO2 film into a photo resist film and then allow exposing a photo resist film in a desired pattern at high accuracy, by forming the absorption layer for exposure rays of light in advance on a poly Si film. CONSTITUTION:The absorption layer 35 for exposure rays of light of molybdenum (Mo) or the compound of Mo and Si i.e. molybdenum silicide (MoSi2) is formed on the upper part of a poly Si film 34 serving as a gate electrode by evaporation or sputtering method. The exposure ray of light with long wavelength, i.e. G ray passes through the photo resist film on the absorption layer 35 in the figure and passes through the absorption layer 35 and the lower poly Si film 34 being reflected at the interface between the lower Si oxide film 33 for gate resulting in the invasion into the photo resist film. The ultraviolet ray is absorbed in the absorption layer 35 and does not have influence to G ray to be incident normally into the photo resist film as exposure ray of light thereafter. Accordingly, said photo resist film is patterned at high accuracy. |
