| 摘要 |
<p>PURPOSE:To obtain a rewritable bipolar PROM while devising high-speed operation, by decreasing emitter depth and reducing emitter size. CONSTITUTION:A transistor having 3X5mum emitter area and 0.3 mum emitter depth is used and its current amplification factor is measured. As a result, a curve (a) is initial characteristics, a curve (b) is characteristics obtained 30 seconds after an emitter-base breakdown is caused for 15 seonds and an about 2mA current is flowed reversely, and a curve (c) is characteristics obtained 6 minutes after a 3mA current is flowed for 6 minutes. The high-hFE state of this is regarded as an unwritten state, and the low state is regarded as a written state. Then, the charge in a trap area on the emitter and base is discharged by ultraviolet-ray irradiation, etc., to realize an increase in hFE.</p> |
