| 摘要 |
PURPOSE:To improve the quality of silicon carbide in high yield, by forming a mixed raw material layer on the peripheral side of a core, heating the periphery with a material layer for further refining, coating the periphery with a mixed raw material layer absorbing impurities, and further refining the material layers. CONSTITUTION:A mixed raw material layer 12 consisting of quartzite and a carbonaceous reducing material is formed on the periphery to be in contact with a core part 11 made from a powdery or granular graphite in a thickness almost corresponding to a layer of decomposed SiC containing the decomposed remaining graphite formed from the temperature conditions given thereto necessary for further refining. A material layer for the further refining 13 in which the quality is improved is charged into the periphery of the layer 12, and the outside of the payer 13 is heated and coated with a mixed raw material layer 14 absorbing impurities. An electric current is applied to electrodes opposite the core part 11 and further refined in a furnace 15 to form an SiC layer of high purity from most of the layers 12 and 13. |
