| 摘要 |
PURPOSE:To obtain the value of uniform transmittance and refractive index while reducing the damage of a reflection preventive film by forming a silicon nitride film with thickness through which currents can be flowed to the surface of a substrate, shaping the reflection preventive film onto the silicon nitride film and molding an electrode. CONSTITUTION:The silicon nitride film 5 with 20-25Angstrom thickness is formed by thermally nitrifying the semiconductor substrate 1 in ammonia, and the reflection preventive film 6 of an oxide is shaped to the upper surfac of the substrate 1 in 700-1,000Angstrom thickness. The film 5 of the back is removed at that time, and the electrode 8 for ohmic contact is formed. Only regions 13 in which electrodes are shaped are removed selectively, and resist films 7 are formed to other sections. The reflection preventive film 6 is removed selectively using the films 7 as masks, and the silicon nitride film is exposed at the electrode sections 13. Mg, Al 10, 10' are evaporated under vacuum, and a depletion layer and an inversion layer 12 are shaped to the interface of the substrate 1. The films 7 and the films 10' are removed. |
