| 摘要 |
PURPOSE:To build a high precision current narrowing structure by a method wherein the flat upper clad surface of a PCW type semiconductor laser device is provided with a current stopping layer containing a stripe shaped window of a prescribed width and the current stopping layer is covered with an electrode forming layer. CONSTITUTION:A stripe shaped groove is formed on an N type InP substrate 9 and an N type InGaAsP light guiding layer 10, InGaAsP active layer 11, InGaAsP active layer 11 and P type InP clad layer 12 are piled one upon another in sequence. Next, an N type InP current stopping layer 13 is formed which then is provided with a stripe shaped window at its central part. In the next process, a P type InP electrode forming layer 14 is grown to cover the entire surface, which is followed by the formation of electrodes 15 and 16. A current narrowing structure of an optimum design is obtained and the conversion efficiency of electric current contributing to light emission is improved. |
