| 摘要 |
PURPOSE:To integrate an FET having functions of both a memory element and switching element by providing the function of the memory element with an insulated gate electrode using a charge storage insulating film and providing the function of the switching element with a P-N junction gate electrode under a chennel. CONSTITUTION:A P type epitaxial layer 5 is, for example, formed via an N<+> type layer 15 on a P type Si substrate 1, and N<+> type source 7 and drain 8 are provided therein. The first gate electrode 11 is provided on the channel between the source 7 and the drain 8 through a charge storage insulating layer, e.g., a barium titanate layer 10. The layer 15 extending under the layer 5 is exposed partly at the part 13 on the surface through the layer 5 as the second gate. The function of the memory element is provided by the first insulating gate, and the function of the switching element is provided with the second junction gate. In this manner, the functions of both the elements can be integrated in small size. |
