摘要 |
PURPOSE:To improve the performance and the reliability, by providing an insulating layer between a component film protruded from a photo detecting part and a common electrode to reduce the leakage current in an unmagnification image sensor. CONSTITUTION:A component film of a thin film photodiode 8 is protruded from the photo detecting part to constitute a parallel capacitor part 10 for the purpose of making the equivalent capacity of the thin film photodiode 8, which is arranged on the same substrate 1, sufficiently larger than that of a thin film blocking diode 9, and an insulating layer 4 is provided between a common electrode 2 in the photo detection side of the thin film photodiode 9 and the protruded component film 5 to reduce the leakage current, thereby receiving a large optical signal output and restraining mixture of signals from other bits low. Even if pinholes exist somewhat in the insulating layer 4, it is hardly influenced. |