| 摘要 |
PURPOSE:To form a cheap passivation film having strong mechanical strength by shaping the passivation film covering the surace of a substrate in double structure, a lower layer thereof consists of a plasma nitride film and an upper layer thereof a phosphorus glass film. CONSTITUTION:The P-SiN film 4 and the PSG film 5 are successively laminated and formed onto a wiring layer 3 of the Si substrate 1 constituting a circuit element. The PSG film is removed through wet etching and the P-SiN silm through plasma etching selectively, and a window 8 for extracting an electrode is shaped. The P- SiN film takes partial charge of the mechanical strength of passivation, and the passivation film 9 formed by replacing one part of a thick film with the cheap PSG film is obtained. Accordingly, the cheap passivation film in multilayer structure having strong mechamical strength can be shaped. |
