发明名称 |
WERKWIJZE VOOR HET MAKEN VAN AMORFE LEGERINGEN MET VERGROTE BANDAFSTAND ALSMEDE DAARUIT GEMAAKTE INRICHTINGEN. |
摘要 |
<p>A semiconductor material comprises amorphous Si containing F (a- Si: F) together with a band gap increasing modifier (e.g. C or N). H may also be incorporated in the material which may be doped. The material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices.</p> |
申请公布号 |
NL8104139(A) |
申请公布日期 |
1982.04.01 |
申请号 |
NL19810004139 |
申请日期 |
1981.09.07 |
申请人 |
ENERGY CONVERSION DEVICES, INC. TE TROY, MICHIGAN, VER.ST.V.AM. |
发明人 |
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分类号 |
H01L31/04;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;H01L29/16;H01L31/0376;H01L31/20;(IPC1-7):23C11/02;03C1/72;01L31/06 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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