| 摘要 |
PURPOSE:To enhance the integration of an I<2>L and to enable the high speed operation of the I<2>L by employing a polycrystalline semiconductor layer as the impurity diffusion source of the collector regin of the inverter transistor of the I<2>L and utilizing the semiconductor layer as a wiring layer. CONSTITUTION:A hole is opened at an oxidized film on the collector forming region of an I<2>L integrated circuit made of an injector transistor to become the base drive power source of an inverter transistor and the inverter transistor, an N type polycrystalline Si layer is formed on the overall surface, is patterned, is then formed with wiring layers 9a-9c, with the layer 9a-9c as diffusion source N type impurity is diffused in the base 6, thereby forming collector regions 7a-7c. In this manner, the integration can be reduced, and high speed operation can be enabled to eliminate the crossunder layer due to the parasitic capacity of P-N junction. |
