| 摘要 |
PURPOSE:To provide a fine pattern and to prevent short circuit by bridging, by a method wherein metal wiring layers are formed covering thin films which have slopes and which are provided on an insulating layer on a semiconductor substrate. CONSTITUTION:An Si-oxide film 1, an Si-nitride film 3 and the 2nd Si-oxide film 6 are provided on a semiconductor substrate 2. A photoresist pattern is provided on the surface after it is plasma-processed with CF4, Ar etc. and the tapered shape Si-oxide films 6 are provided by etching. The whole surface is covered with Al film and Al wiring patterns 8 are formed by etching in such a manner that they cover the tapered patterns 6 completely. With above method, wider intervals between wirings can be provided without reducing the cross sectional area of Al so that shot circuit by bridging can be eliminated and disconnection by melting of the wiring by building-up of current density can also be eliminated. |
