发明名称 HIGH PRESSURE HEATING DEVICE
摘要 PURPOSE:To reduce a processing time and improve the accuracy of processing by a method wherein a high frequency heating device or a lamp is arranged in such a way as it covers a reaction tube installed in a pressurizing tank of a high pressure heating device. CONSTITUTION:Silicon reaction tube 2 (3 is a sealing cap) for use in storing Si wafer 4 placed on a Si coated carbon board 7 is arranged in a metalic pressurizing tank 1 keeping its interior pressure higher than an atmospheric pressure. High frequency heating coil 6 (or heating lamp) 6 is installed around the reaction tube 2 to perform an oxidation and/or diffusion of Si wafer 4 or heat treatment such as annealing etc. Thus, a processing time may be reduced as compared to that performed by a resistance heating, as well as the accuracy of heat treatment may be improved, resulting in making a superior characteristic of the component element.
申请公布号 JPS5710919(A) 申请公布日期 1982.01.20
申请号 JP19800087005 申请日期 1980.06.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIRAYAMA MAKOTO;MIYOSHI HIROKAZU
分类号 F27D11/02;H01L21/18;H01L21/31 主分类号 F27D11/02
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