| 摘要 |
PURPOSE:To prevent the disconnection of a wire at the stepwise part in a semiconductor device by forming a hole via a mask material on an insulating film formed on a semiconductor substrate, forming a high melting point metal electrode film at the hole with the mask material as a mask and then covering the metallic film with a wiring metallic film. CONSTITUTION:An insulating film 3 is formed on a semiconductor substrate 1 having a reverse conductivity type region 2, a hole for an electrode is etched via a mask material 4, with the mask material 4 retained high melting point metals 6, 6' such as Pt, Ti or the like are covered in the same thickness as the film 3 as a base electrode film, then the mask material 4 and the metal 6' are concurrently removed, and wiring metal layer such as aluminum or the like is covered on the entire surface. Thus, it can prevent the disconnection of the wire at the stepwise insulating film at the periphery of the electrode and the improper P-N junction due to the melting of the electrode material to the semiconductor material. |
