| 摘要 |
The method of forming contacts with a silicon semiconductor wafer, uses conductive layers on the underside of the semiconductor material (1) which carries the epitaxial layer (2) of the same conductivity type. The first contact layer (6) is of titanium, and carries a palladium covering layer (7) and a tin layer (8) followed by an indium layer (9). Instead of the tin layer, a lead or tin-lead alloy layer may be used. The thicknesses of the titanium, palladium, tin and indium layers are respectively 0.03, 0.4, a few and one microns. The titanium and palladium layers are vapour deposited, and the tin and indium layers can be galvanically or vapour deposited. The semiconductor device can be a printed circuit. |
