| 摘要 |
PURPOSE:To improve the crystallinity of a compound semiconductor substrate to which inert element ion is injected in an atmosphere of substrate forming element by heat treating the substrate and then removing the ion injected layer. CONSTITUTION:Inert element ion such as Ne or the like is injected to the Cr-doped semi-insulating substrate 1, and the substrate 1 is heated in As atmosphere of the substrate forming element. After the excessive Cr, unnecessary impurity and crystal fault are collected to the layer 4 by this heat treatment, they are removed by a chemical etching process, and the semi-insulating GaAs substrate is obtained. Since the excessive Cr and crystal fault are thus removed in the substrate, the substrate having preferable crystallinity can be obtained. When the semiconductor device using the substrate is formed, its manufacturing yield and reliability can be improved. |
