| 摘要 |
PURPOSE:To reduce the edge effect and to avoid the peak shift, by forming the material increasing the crystal anisotropy or lowering the saturated magnetization, at the both sides of magnetic substance layer of gap, in forming the thin film head. CONSTITUTION:On the substrate of head, the material which increases the crystal anisotropy of the magnetic substance layer 1 of thin film head or lowering the saturated mangetization, like the 1st diffusion layer 5 of Cr, is formed. Next, the magnetic substance layer (e.g., NiFe) 1 is vapor-deposited, and Cr is diffused on the layer 1 at the evaporation temperature (in this example, 300-350 deg.C). Next, the air gap 2 is provided and after the magnetic substance layer 1 is formed by vapor evaporation of NiFe for another side, the 2nd diffusion layer 6 is formed by vapor- depositing Cr. The formation is easy if the layers 5, 6 are formed on the entire surface, but the efficiency is increased, if evaporation is made only to the both sides of the air gap 2, although the processing is more or less complicated. Thus, the edge effect which is a problem of the thin film head can be mitigated to prevent the peak shift. |
