| 摘要 |
A semiconductor device(10) for use in detection cct. of the AM receiver is composed of a n-type first semiconductor region(1)(I), a p-type semiconductor region(2)(II) adjacent to I, a n-type third semiconductor region(3) adjacent to II, and a p-type control semiconductor region(6) adjacent to I. The semiconductor region is positoned at the distance less than the diffusion length of the minority carrier in I. Three electrodes(4E, 4B, 4C) and additional electrode(4G) are connected from the semiconductor device. Amplitude modualted input signals are applied between the additional electrode(4G) and the first electrode(4E), and the detected output signals are obtained through the integral cct.(21). The level of the output signals varies by variable resistor(19).
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