| 发明名称 |
Growth of thallium-doped silicon from a tin-thallium solution |
| 摘要 |
A method of growing single crystals of silicon doped with thallium for use as an extrinsic silicon photodetector of 3-5 um infrared radiation which will operate above 77 K.
|
| 申请公布号 |
US4270973(A) |
申请公布日期 |
1981.06.02 |
| 申请号 |
US19800144738 |
申请日期 |
1980.04.28 |
| 申请人 |
HONEYWELL INC. |
发明人 |
SCHMIT, JOSEPH L.;SCOTT, M. WALTER |
| 分类号 |
C30B19/02;(IPC1-7):C30B19/02 |
主分类号 |
C30B19/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
