| 摘要 |
<p>PURPOSE:To obtain a filter with high color reproduction using the basic absorption of a semiconductor in a high yield by forming a color separation filter film made of solid soln. of ZnS and CdS on a light transmitting substrate followed by heat treatment. CONSTITUTION:On light transmitting substrate 11 reflection preventing layer 14 of ZrO2, Y2O3, La2O3 or the like is formed, on layer 14 color separation filter film 15 is formed, and they are heat treated at 300-600 deg.C for 5-60min in a vacuum or an atmosphere of inert gas or the like. Film 15 has its basic absorption end in 450- 500nm and is made of solid soln. of ZnS and CdS. A resist pattern is then formed, and striping is carried out with 3-8 N hydrochloric acid or a mixed soln. based on 3-8 N hydrochloric acid and potassium dichromate.</p> |
