| 摘要 |
PURPOSE:To obtain a semiconductor substrate having extremely scanty density of carbon, oxygen and having no generation of swirl defect by a method wherein a monocrystalline semiconductor substrate is formed only with an epitaxial growth layer. CONSTITUTION:An epitaxial growth layer 3 is formed on the main face of a monocrystalline semiconductor plane material 1, and the material 1 is removed to manufacture a monocrystalline semiconductor substrate 4 consisting of only the epitaxial growth layer 3. Accordingly, a monocrystalline semiconductor substrate having extremely scanty density of carbon, oxygen and having no generation of swirl defect can be obtained. |
